InAs nanowire MOSFET differential active mixer on Si-substrate
Författare
Summary, in English
An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
Avdelning/ar
Publiceringsår
2014
Språk
Engelska
Sidor
682-682
Publikation/Tidskrift/Serie
Electronics Letters
Volym
50
Issue
9
Dokumenttyp
Artikel i tidskrift
Förlag
IEE
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- circuit
- RF
- InAs
- mixer
- nanowire
- MOSFET
Status
Published
Projekt
- EIT_WWW Wireless with Wires
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 1350-911X