Novel nanoelectronic triodes and logic devices with TBJs
Författare
Summary, in English
In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
Avdelning/ar
Publiceringsår
2004
Språk
Engelska
Sidor
164-166
Publikation/Tidskrift/Serie
IEEE Electron Device Letters
Volym
25
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
Nyckelord
- ballistic devices
- logic gates
- nanoelectronics
- ballistic junctions (TBJs)
- three-terminal
- diodes
- triodes
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0741-3106