Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
Författare
Summary, in English
We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.
Publiceringsår
2014
Språk
Engelska
Sidor
47-51
Publikation/Tidskrift/Serie
Journal of Crystal Growth
Volym
386
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Condensed Matter Physics
- Chemical Sciences
Nyckelord
- Nanostructures
- Growth from vapor
- Metal organic vapor phase epitaxy
- Nanomaterials
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0022-0248