Vertical wrap-gated nanowire transistors
Författare
Summary, in English
We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.
Publiceringsår
2006
Språk
Engelska
Sidor
227-230
Publikation/Tidskrift/Serie
Nanotechnology
Volym
17
Issue
11
Dokumenttyp
Artikel i tidskrift
Förlag
IOP Publishing
Ämne
- Nano Technology
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0957-4484