High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique

Summary, in English

We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.

• Författare: Cezar Zota; Lars-Erik Wernersson; Erik Lind
• Avdelning/ar: Institutionen för elektro- och informationsteknik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2014
• Språk: Engelska
• Publikation/Tidskrift/Serie: 26th International Conference on Indium Phosphide and Related Materials (IPRM)
• Länkar: http://dx.doi.org/10.1109/ICIPRM.2014.6880567
• Dokumenttyp: Konferensbidrag
• Förlag: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering
• Conference name: 26th International Conference on Indium Phosphide and Related Materials (IPRM)
• Conference date: 2014-05-11 - 2014-05-15
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1092-8669