Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
Författare
Summary, in English
Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.
Publiceringsår
2014
Språk
Engelska
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
105
Issue
3
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0003-6951