High Frequency InGaAs Nanowire MOSFETs

Summary, in English

We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum g_m=2.95 mS/ μm at V_DS=0.5 V, and f_T/f_max=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated g_m=1.35 mS/μm and f_T/f_max=100/155 GHz. We also demonstrate a non- parabolic, ballistic charge/current compact model for rectangular nanowire FETs.

• Författare: E. Lind
• Avdelning/ar: Institutionen för elektro- och informationsteknik
• Publiceringsår: 2015-10-30
• Språk: Engelska
• Publikation/Tidskrift/Serie: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
• Länkar: http://dx.doi.org/10.1109/CSICS.2015.7314508
• Dokumenttyp: Konferensbidrag
• Förlag: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering
• Nyckelord: III-V; Indium gallium arsenide; Millimeter wave transistors; MOSFET; Nanowires
• Conference name: 37th IEEE International Symposium on Workload Characterization, IISWC 2015
• Conference date: 2015-10-11 - 2015-10-14
• Conference place: New Orleans, United States
• Status: Published
• ISBN/ISSN/Övrigt: ISBN: 9781479984947