Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
Författare
Summary, in English
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]
Avdelning/ar
Publiceringsår
2010
Språk
Engelska
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
96
Issue
23
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0003-6951