Epitaxial III-V nanowires on silicon
Författare
Summary, in English
We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
Publiceringsår
2004
Språk
Engelska
Sidor
1987-1990
Publikation/Tidskrift/Serie
Nano Letters
Volym
4
Issue
10
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1530-6992