Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

Summary, in English

We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO₂ grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO₂ to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO₂ reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

• Författare: M. Hannula; K. Lahtonen; H. Ali-Löytty; A. A. Zakharov; T. Isotalo; J. Saari; M. Valden
• Avdelning/ar: MAX IV-laboratoriet
• Publiceringsår: 2016-07-01
• Språk: Engelska
• Sidor: 76-81
• Publikation/Tidskrift/Serie: Scripta Materialia
• Volym: 119
• Länkar: http://dx.doi.org/10.1016/j.scriptamat.2016.03.016
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Nyckelord: Atomic layer deposition (ALD); Semiconductors; Surface modification; Transition metal silicides; X-ray photoelectron spectroscopy (XPS)
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1359-6462