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Drive current and threshold voltage control in vertical InAs wrap-gate transistors

In English

Författare

Summary, in English

Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.

Publiceringsår

2008

Språk

Engelska

Sidor

236-237

Publikation/Tidskrift/Serie

Electronics Letters

Volym

44

Issue

3

Dokumenttyp

Artikel i tidskrift

Förlag

IEE

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1350-911X