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Precursor evaluation for in situ InP nanowire doping

Publiceringsår: 2008
Språk: Engelska
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 19
Nummer: 44
Dokumenttyp: Artikel i tidskrift
Förlag: IOP Publishing


The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.


  • Nano Technology


  • ISSN: 0957-4484

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