1 volt CMOS Bluetooth front-end
Författare
Summary, in English
A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP<sub>1</sub> is -16 dBm, and the IIP<sub>3</sub> is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology
Publiceringsår
2002
Språk
Engelska
Sidor
795-798
Publikation/Tidskrift/Serie
ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
Dokumenttyp
Konferensbidrag
Förlag
Univ. Bologna
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- conversion gain
- power consumption
- topology robustness
- measurement correlation
- input matching
- maximum signal headroom
- Bluetooth specification 1.0B
- passive mixer
- common-gate LNA
- CMOS Bluetooth front-end
- low IF device
- noise figure
- Bluetooth receiver
- 1 V
- 2.5 mW
- 5 dB
- 14 dB
- 0.25 micron
Conference name
ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
Conference date
2002-09-24 - 2002-09-26
Conference place
Firenze, Italy
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 88-900847-9-0