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1 volt CMOS Bluetooth front-end

Publiceringsår: 2002
Språk: Engelska
Sidor: 795-798
Publikation/Tidskrift/Serie: ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
Dokumenttyp: Konferensbidrag
Förlag: Univ. Bologna


A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP1 is -16 dBm, and the IIP3 is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • conversion gain
  • power consumption
  • topology robustness
  • measurement correlation
  • input matching
  • maximum signal headroom
  • Bluetooth specification 1.0B
  • passive mixer
  • common-gate LNA
  • CMOS Bluetooth front-end
  • low IF device
  • noise figure
  • Bluetooth receiver
  • 1 V
  • 2.5 mW
  • 5 dB
  • 14 dB
  • 0.25 micron


ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
  • ISBN: 88-900847-9-0

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