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Strategy for Neutralizing the Impact of Insertion Devices on the MAX IV 3 GeV Storage Ring

  • Erik Wallén
  • Simon Leemann
Publiceringsår: 2011
Språk: Engelska
Sidor: 1262-1264
Publikation/Tidskrift/Serie: [Host publication title missing]
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


In order to prepare for the potentially negative influence of insertion devices (IDs) on beam lifetime, injection effi- ciency and beam size in the MAX IV 3 GeV storage ring, a strategy for neutralizing the foreseen effects of the IDs has been developed. The strategy involves a local correction of the betatron phase advance by adjusting the strength of the quadrupoles adjacent to the ID as well as a global tune correction in order to avoid drift of the working point of the storage ring during operation. Air coils with empirical feed forward tables for the excitation current will compen- sate for field integral errors. The lattice of the MAX IV 3 GeV storage ring appears to be robust and it tolerates the dynamic multipoles created by the expected initial set of IDs provided that the linear optics matching has been carried out.


  • Natural Sciences
  • Physical Sciences


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