Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
Publikation/Tidskrift/Serie: Acta Physica Polonica A
Förlag: Polish Academy of Sciences
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
- Natural Sciences
- Physical Sciences
4th Workshop on Quantum Chaos and Localisation Phenomena
- ISSN: 0587-4246