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GaMnAs: Layers, Wires and Dots

Publiceringsår: 2008
Språk: Engelska
Sidor: 1001-1012
Publikation/Tidskrift/Serie: ACTA PHYSICA POLONICA A
Volym: 114
Nummer: 5
Dokumenttyp: Konferensbidrag
Förlag: Polish Academy of Sciences


Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.


  • Physical Sciences
  • Natural Sciences


37th International School on the Physics of Semiconducting Compounds
  • ISSN: 0587-4246

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