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High-Performance InAs Nanowire MOSFETs

Publiceringsår: 2012
Språk: Engelska
Sidor: 791-793
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Volym: 33
Nummer: 6
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.


  • Electrical Engineering, Electronic Engineering, Information Engineering


  • ISSN: 0741-3106

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