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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

Publiceringsår: 2012
Språk: Engelska
Sidor: 369-371
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Volym: 33
Nummer: 3
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Gate-last
  • InGaAs
  • metal-organic chemical vapor deposition (MOCVD)
  • regrowth
  • self-aligned
  • surface channel


  • ISSN: 0741-3106

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