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Structural Characterisation of GaP <111 > B Nanowires by HRTEM

Publiceringsår: 2008
Språk: Engelska
Sidor: 229-232
Publikation/Tidskrift/Serie: Microscopy of Semiconducting Material 2007
Volym: 120
Dokumenttyp: Konferensbidrag
Förlag: Springer


GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.


  • Condensed Matter Physics


15th Conference on Microscopy of Semiconducting Materials
  • ISSN: 0930-8989
  • ISBN: 978-1-4020-8614-4

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