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A novel device principle for nanoelectronics

Publiceringsår: 2002
Språk: Engelska
Sidor: 417-420
Publikation/Tidskrift/Serie: Materials Science and Engineering C: Materials for Biological Applications
Volym: 19
Nummer: 1-2
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.


  • Condensed Matter Physics
  • 300 K
  • parabolic behavior
  • Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP
  • voltage
  • novel electrical characteristic
  • symmetric three-terminal device
  • broken device symmetry
  • 2DEG
  • semiconductor QW
  • push-pull fashion
  • symmetric TBJ device
  • three-terminal ballistic junctions
  • nanoelectronics
  • room temperature electrical property


  • ISSN: 0928-4931

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