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Coupling between lateral modes in a vertical resonant tunneling structure

Publiceringsår: 2002
Språk: Engelska
Sidor: 950-953
Publikation/Tidskrift/Serie: Physica E: Low-Dimensional Systems and Nanostructures
Volym: 13
Nummer: 2-4
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • quantum dot structure
  • 4.2 K
  • vertical resonant tunneling structure
  • vertical electron transport
  • laterally constricted resonant tunneling transistor
  • lateral modes coupling
  • scattering-matrix approach
  • Landauer formalism
  • current-voltage measurements


  • ISSN: 1386-9477

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