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Low power 0.18μm CMOS dual-band front-end

Publiceringsår: 2005
Språk: Engelska
Sidor: 81-84
Publikation/Tidskrift/Serie: 2005 IEEE Asian Solid-State Circuits Conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a passive mixer. The band selection is performed by switching a capacitor in and out of the LNA load, changing the resonance frequency between 2.2GHz and 4.0GHz. The measured noise figure is below 3.5dB for both frequency bands for supply voltages from 1.8V down to 1V. The conversion gain is more than 10dB, and the third order intercept point (IIPs) is above -6dBm. The circuit draws 2.4mA from a 1V supply


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • common-gate low noise amplifier
  • CMOS dual-band front-end
  • capacitive cross coupling
  • passive mixer
  • capacitor switching
  • 2.4 mA
  • resonance frequency
  • 2.2 to 4 GHz
  • 0.18 micron
  • 1.8 V
  • 1 V


2005 IEEE Asian Solid-State Circuits Conference
  • ISBN: 0-7803-9162-4

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