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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

Publiceringsår: 2011
Språk: Engelska
Sidor: 2733-2738
Publikation/Tidskrift/Serie: IEEE Transactions on Microwave Theory and Techniques
Volym: 59
Nummer: 10
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • High-k
  • InAs
  • nanowire
  • RF


  • Nano-lup-obsolete
  • ISSN: 0018-9480

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