A 90nm CMOS UWB LNA
Publikation/Tidskrift/Serie: [Host publication title missing]
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25dB, a noise figure of 4.1-9.4 dB, and an input reflection S11 better than -12dB between 3.1GHz and 10.6GHz, while consuming 8.6mA from a 1V supply.
- Electrical Engineering, Electronic Engineering, Information Engineering
Norchip Conference, 2008
- Analog RF-lup-obsolete
- ISBN: 978-1-4244-2492-4