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Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures

Publiceringsår: 2007
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 90
Nummer: 5
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.


  • Natural Sciences
  • Physical Sciences


  • ISSN: 0003-6951

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