Doping Incorporation in InAs nanowires characterized by capacitance measurements
Författare
Summary, in English
Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.
Avdelning/ar
Publiceringsår
2010
Språk
Engelska
Publikation/Tidskrift/Serie
Journal of Applied Physics
Volym
108
Fulltext
- Available as PDF - 263 kB
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Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- III-V semiconductors
- MISFET
- nanowires
- semiconductor doping
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0021-8979