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Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires

Publiceringsår: 2005
Språk: Engelska
Sidor: 1943-1947
Publikation/Tidskrift/Serie: Nano Letters
Volym: 5
Nummer: 10
Dokumenttyp: Artikel i tidskrift
Förlag: The American Chemical Society


We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.


  • Nano Technology


  • ISSN: 1530-6992

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