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A resonant tunneling permeable base transistor with Al-free tunneling barriers

Publiceringsår: 2002
Språk: Engelska
Sidor: 155-156
Publikation/Tidskrift/Serie: Device Research Conference (Cat. No.02TH8606)
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • GaAsP/GaAs/GaAsP heterostructure
  • 20 to 100 GHz
  • double barrier heterostructure
  • metal grating
  • lift-off
  • Al-free tunneling barriers
  • resonant tunneling permeable base transistor
  • RT-PBT
  • resonant tunneling PBT
  • three step fabrication process
  • W features
  • electron beam lithography
  • GaAsP-GaAs-GaAsP
  • W


Device Research Conference, 2002
  • ISBN: 0-7803-7317-0

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