A resonant tunneling permeable base transistor with Al-free tunneling barriers
Författare
Summary, in English
Publiceringsår
2002
Språk
Engelska
Sidor
155-156
Publikation/Tidskrift/Serie
Device Research Conference (Cat. No.02TH8606)
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- GaAsP/GaAs/GaAsP heterostructure
- 20 to 100 GHz
- double barrier heterostructure
- metal grating
- lift-off
- Al-free tunneling barriers
- resonant tunneling permeable base transistor
- RT-PBT
- resonant tunneling PBT
- three step fabrication process
- MOVPE
- W features
- electron beam lithography
- GaAsP-GaAs-GaAsP
- W
Conference name
Device Research Conference, 2002
Conference date
2002-06-24 - 2002-06-26
Conference place
Santa Barbara, CA, United States
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-7317-0