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Spin relaxation in InAs nanowires studied by tunable weak antilocalization

Publiceringsår: 2005
Språk: Engelska
Sidor: 1-205328
Publikation/Tidskrift/Serie: Physical Review B. Condensed Matter and Materials Physics
Volym: 71
Dokumenttyp: Artikel i tidskrift
Förlag: American Physical Society


We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.


  • Condensed Matter Physics



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