Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination
Författare
Summary, in English
In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable substrate plays a crucial role for future electronics applications involving patterning. Different techniques used to characterize the graphene grown are summarized. We moreover show that atomic hydrogen exposures can convert a monolayer graphene sample on SiC(0 0 0 1) to bi-layer graphene without the carbon buffer layer. Thus, a new process to prepare large, homogeneous stable bi-layer graphene sheets on SiC(0 0 0 1) is presented. The process is shown to be reversible and should be very attractive for various applications, including hydrogen storage.
Avdelning/ar
Publiceringsår
2010
Språk
Engelska
Publikation/Tidskrift/Serie
Journal of Physics D: Applied Physics
Volym
43
Issue
37
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
IOP Publishing
Ämne
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1361-6463