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Resonant Tunneling Permeable Base Transistor for RF applications

Publiceringsår: 2003
Språk: Engelska
Sidor: 487-488
Publikation/Tidskrift/Serie: 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • molecular beam epitaxy
  • double barrier heterostructure
  • room temperature
  • semiconductor heterostructure
  • metallic elements
  • resonant tunneling permeable base transistor
  • tungsten
  • W
  • AlGaAs-InGaAs
  • 30 nm
  • 293 to 298 K
  • electron beam lithography


2003 International Semiconductor Device Research Symposium
  • ISBN: 0-7803-8139-4

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