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Measured CMOS Switched High-Quality Capacitors in a Reconfigurable Matching Network

Publiceringsår: 2007
Språk: Engelska
Sidor: 858-862
Publikation/Tidskrift/Serie: IEEE Transactions on Circuits and Systems - II - Express Briefs
Volym: 54
Nummer: 10
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


Switched capacitors are here investigated for use in reconfigurable matching networks, particularly for DVB-H frequencies. A 0.13 um CMOS circuit is evaluated through both simulations and measurements. Source grounded NMOS transistors are used to switch high quality metal capacitors located above metal layer 8. The quality factor and tuning range depend on frequency, switch voltage, capacitor size, and transistor width. There is a clear trade-off between quality factor and tuning range, and measurements show quality factors above 50, 100, and 150 at tuning ranges of 3.9, 2.4, and 1.6, respectively. A reconfigurable matching network with the switched capacitors has been realized using external inductors and the measured matching domain for the DVB-H frequency band is shown. The total loss of the network is 1.0 dB, a result of the high quality switched capacitors.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • matching
  • MEMS
  • CMOS
  • switched capacitor
  • DVB-H


  • ISSN: 1558-3791

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