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Confinement properties of a Ga0.25In0.75As/InP quantum point contact

Publiceringsår: 2008
Språk: Engelska
Sidor: 5-155309
Publikation/Tidskrift/Serie: Physical Review B (Condensed Matter and Materials Physics)
Volym: 77
Nummer: 15
Dokumenttyp: Artikel i tidskrift
Förlag: American Physical Society


We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.


  • Condensed Matter Physics


  • ISSN: 1098-0121

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