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Confinement properties of a Ga0.25In0.75As/InP quantum point contact

In English

Författare

  • T P Martin
  • C A Marlow
  • Lars Samuelson
  • A R Hamilton
  • H Linke
  • R P Taylor

Summary, in English

We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.

Publiceringsår

2008

Språk

Engelska

Sidor

5-155309

Publikation/Tidskrift/Serie

Physical Review B (Condensed Matter and Materials Physics)

Volym

77

Issue

15

Dokumenttyp

Artikel i tidskrift

Förlag

American Physical Society

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1098-0121