Resonant tunneling permeable base transistors with high transconductance
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
- resonant tunneling
- gallium arsenide (GaAs)
- permeable base transistors
- ISSN: 0741-3106