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Resonant tunneling permeable base transistors with high transconductance

Publiceringsår: 2004
Språk: Engelska
Sidor: 678-680
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Volym: 25
Nummer: 10
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • resonant tunneling
  • gallium arsenide (GaAs)
  • permeable base transistors
  • transistors
  • tungsten


  • ISSN: 0741-3106

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