Degenerate p-doping of InP nanowires for large area tunnel diodes

Summary, in English

We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

• Författare: Jesper Wallentin; Peter Wickert; Martin Ek; Anders Gustafsson; Reine Wallenberg; Martin Magnusson; Lars Samuelson; Knut Deppert; Magnus Borgström
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes; NanoLund: Centre for Nanoscience
• Publiceringsår: 2011
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 99
• Issue: 25
• Länkar: http://dx.doi.org/10.1063/1.3669697
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Chemical Sciences; Condensed Matter Physics; Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951