Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

Publiceringsår: 2003
Språk: Engelska
Sidor: 4830-4832
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 83
Nummer: 23
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.


  • Atom and Molecular Physics and Optics
  • Condensed Matter Physics


  • ISSN: 0003-6951

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen