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Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures

Publiceringsår: 2008
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 93
Nummer: 20
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


We report on magnetoresistance (MR) studies on Co/AlOX/Au and Co/AlOX/Ni/Au magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field.


  • Condensed Matter Physics
  • nickel
  • magnetisation
  • tunnelling magnetoresistance
  • magnetic thin films
  • gold
  • ferromagnetic materials
  • polarisation
  • electron spin
  • cobalt
  • aluminium compounds
  • band structure


  • ISSN: 0003-6951

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