Three-dimensional integrated resonant tunneling transistor with multiple peaks
Publikation/Tidskrift/Serie: Applied Physics Letters
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics
A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
- ISSN: 0003-6951