Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Författare
Summary, in English
We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction
of the surface.
of the surface.
Publiceringsår
2011
Språk
Engelska
Sidor
1091-1094
Publikation/Tidskrift/Serie
Microelectronic Engineering
Volym
88
Dokumenttyp
Konferensbidrag
Ämne
- Atom and Molecular Physics and Optics
Conference name
17th Conference on "Insulating Films on Semiconductors"
Conference date
2011-06-21 - 2011-06-24
Conference place
Grenoble, France
Status
Published
Forskningsgrupp
- Nano