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Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Publiceringsår: 2011
Språk: Engelska
Sidor: 1091-1094
Publikation/Tidskrift/Serie: Microelectronic Engineering
Volym: 88
Dokumenttyp: Konferensbidrag


We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction

of the surface.


  • Atom and Molecular Physics and Optics


17th Conference on "Insulating Films on Semiconductors"
  • Nano-lup-obsolete

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