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In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Publiceringsår: 2012
Språk: Engelska
Sidor: 970-972
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Volym: 33
Nummer: 7
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • generator
  • pulse
  • metal-oxide-semiconductor field-effect transistor (MOSFET)
  • metal-organic chemical vapor deposition regrowth
  • Impulse radio
  • InGaAs
  • resonant tunneling diode (RTD)
  • ultrawideband
  • wavelet


  • ISSN: 0741-3106

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