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Photon mapping of quantum dots using a scanning tunneling microscope

Författare

Summary, in English

Scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL) have been used to investigate the geometric and optical properties of individual self-assembled InP quantum dots overgrown with a thin layer of GaInP. STL spectra and monochromatic photon maps were used to correlate the surface topography with the optical properties of single quantum dots. We find a spatial resolution of about 10 nm in the photon maps. Theoretical emission spectra were calculated by six-band k.p theory using a realistic shape of the dot as well as of the cap layer. The calculated emission spectrum of a single dot is in good agreement with the experimental findings. (C) 2002 American Institute of Physics.

Publiceringsår

2002

Språk

Engelska

Sidor

4443-4445

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

81

Issue

23

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951