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Photon mapping of quantum dots using a scanning tunneling microscope

Publiceringsår: 2002
Språk: Engelska
Sidor: 4443-4445
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 81
Nummer: 23
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL) have been used to investigate the geometric and optical properties of individual self-assembled InP quantum dots overgrown with a thin layer of GaInP. STL spectra and monochromatic photon maps were used to correlate the surface topography with the optical properties of single quantum dots. We find a spatial resolution of about 10 nm in the photon maps. Theoretical emission spectra were calculated by six-band k.p theory using a realistic shape of the dot as well as of the cap layer. The calculated emission spectrum of a single dot is in good agreement with the experimental findings. (C) 2002 American Institute of Physics.


  • Condensed Matter Physics


  • ISSN: 0003-6951

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