Circuits and devices with integrated VFETs and RTDs
Författare
Summary, in English
We have realised a new technology for the integration of VFETs and RTDs. For these tunnelling transistors (so called resonant tunnelling permeable base transistors) we have developed large signal models which have been implemented in a Cadence simulation environment. The DC I-V characteristics are reproduced to a very high degree in these models. The models are further used for simulations of the behaviour of simple small-scale circuits including resonant tunnelling transistors. Examples of circuits studied are a monostable-bistable logic element and a ternary quantiser, where the later is based on a new 3D architecture of RTDs and VFETs
Publiceringsår
2002
Språk
Engelska
Sidor
205-208
Publikation/Tidskrift/Serie
2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- VFETs
- large signal models
- Cadence simulation environment
- DC I-V characteristics
- monostable-bistable logic element
- small-scale circuits
- 3D architecture
- ternary quantiser
- RTDs
- resonant tunnelling permeable base transistors
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-7448-7