Au-free epitaxial growth of InAs nanowires

Summary, in English

III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.

• Författare: Bernhard Mandl; Julian Stangl; Thomas Mårtensson; Anders Mikkelsen; Jessica Bolinsson; Lisa Karlsson; Gunther Bauer; Lars Samuelson; Werner Seifert
• Avdelning/ar: Fasta tillståndets fysik; Synkrotronljusfysik; Centrum för analys och syntes
• Publiceringsår: 2006
• Språk: Engelska
• Sidor: 1817-1821
• Publikation/Tidskrift/Serie: Nano Letters
• Volym: 6
• Issue: 8
• Länkar: http://dx.doi.org/10.1021/nl060452v
• Dokumenttyp: Artikel i tidskrift
• Förlag: The American Chemical Society (ACS)
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1530-6992