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Au-free epitaxial growth of InAs nanowires

Publiceringsår: 2006
Språk: Engelska
Sidor: 1817-1821
Publikation/Tidskrift/Serie: Nano Letters
Volym: 6
Nummer: 8
Dokumenttyp: Artikel i tidskrift
Förlag: The American Chemical Society


III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.


  • Nano Technology


  • ISSN: 1530-6992

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