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Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes

Publiceringsår: 2002
Språk: Engelska
Sidor: 252-257
Publikation/Tidskrift/Serie: Applied Surface Science
Volym: 190
Nummer: 1
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the inter-face quality in the heterostructures. For GaInP RTDs, we show that the introduction of Gap intermediate layers is crucial for the realisation. of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of Gap are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAslambdaP1-x alloys are fabricated showing the best peak-to-valley ratio of the diodes (about 5), as well as a symmetric I-V characteristics. The electrical data are further compared to studies by transmission electron microscopy (TEM) in the various material systems.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • GaAs/GaInP
  • GaAs/GaP
  • RTD
  • resonant tunnelling
  • GaAs/GaAsP


  • ISSN: 1873-5584

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