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Dynamics of extremely anisotropic etching of InP nanowires by HCl

Publiceringsår: 2011
Språk: Engelska
Sidor: 222-224
Publikation/Tidskrift/Serie: Chemical Physics Letters
Volym: 502
Nummer: 4-6
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.


  • Condensed Matter Physics


  • ISSN: 0009-2614

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