Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Noise optimization of an inductively degenerated CMOS low noise amplifier

Publiceringsår: 2001
Språk: Engelska
Sidor: 835-841
Publikation/Tidskrift/Serie: IEEE Transactions on Circuits and Systems - 2, Analog and Digital Signal Processing1992-01-01+01:002004-01-01+01:00
Volym: 48
Nummer: 9
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


This paper presents a technique for substantially reducing the noise of a CMOS low noise amplifier implemented in the inductive source degeneration topology. The effects of the gate induced current noise on the noise performance are taken into account, and the total output noise is strongly reduced by inserting a capacitance of appropriate value in parallel with the amplifying MOS transistor of the LNA. As a result, very low noise figures become possible already at very low power consumption levels


  • Electrical Engineering, Electronic Engineering, Information Engineering


  • ISSN: 1057-7130

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen