Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Optically induced charge storage and current generation in InAs quantum dots

Publiceringsår: 2002
Språk: Engelska
Publikation/Tidskrift/Serie: Physical Review B (Condensed Matter and Materials Physics)
Volym: 65
Nummer: 7
Dokumenttyp: Artikel i tidskrift
Förlag: American Physical Society


We report on optically induced charge storage effects and cur-rent generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.


  • Condensed Matter Physics


  • ISSN: 1098-0121

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen