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MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures

In English

Författare

Summary, in English

We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.

Publiceringsår

2009

Språk

Engelska

Sidor

249-252

Publikation/Tidskrift/Serie

2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

21st International Conference on Indium Phosphide and Related Materials

Conference date

2009-05-10 - 2009-05-14

Conference place

Newport Beach, CA, United States

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1092-8669