Structural properties of LT-GaAs(100) and GaMnAs(100) surfaces studied by scanning tunneling microscopy
Författare
Summary, in English
Avdelning/ar
Publiceringsår
2002
Språk
Engelska
Publikation/Tidskrift/Serie
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp
Konferensbidrag
Förlag
Lund University
Ämne
- Atom and Molecular Physics and Optics
Nyckelord
- 110 K
- 600 degC
- 400 degC
- morphology
- annealing temperature
- GaMnAs(100) surfaces
- structural properties
- scanning tunneling microscopy
- GaMnAs compounds
- low temperature molecular beam epitaxy
- subpicosecond carrier lifetimes
- GaMnAs
- carrier mobility
- dark resistivity
- ferromagnetic materials
- As capped MBE grown LT-GaAs(100)
- semiconductor devices
Conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Conference date
2002-06-24 - 2002-06-28
Conference place
Malmö, Sweden
Status
Published