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Photoemission study of LT-GaAs

Publiceringsår: 2004
Språk: Engelska
Sidor: 234-238
Publikation/Tidskrift/Serie: Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)
Volym: 382
Nummer: 1-2
Dokumenttyp: Konferensbidrag
Förlag: Elsevier


The electronic structure of GaAs (100) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As-2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (100) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs. (C) 2004 Elsevier B.V. All rights reserved.


  • Physical Sciences
  • Natural Sciences
  • crystal growth
  • semiconductors
  • synchrotron radiation
  • photoemission
  • spectroscopy
  • valence band
  • antisite defect
  • gallium arsenide
  • molecular beam epitaxy


European Materials Research Society Fall Meeting, Symposium B
  • ISSN: 0925-8388

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